Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon
نویسندگان
چکیده
The formation and propagation of anti-phase boundaries (APBs) in the epitaxial growth III-V semiconductors on Silicon is still subject great debate, despite impressive number studies focusing this topic last past decades. control layer phase major importance for future realization photonic integrated circuits that include efficient light sources or new nano-electronic devices, example. Here, it experimentally demonstrated main-phase domain overgrows domains (APDs) because grows faster. A large-scale analysis evolution based reflection high-energy electron diffraction atomic force microscopy case molecular beam epitaxy GaSb (001) substrate presented. rate difference between two accurately measured shown to come from step distribution at surface. influence preparation as well condition also clarified.
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ژورنال
عنوان ژورنال: Advanced electronic materials
سال: 2021
ISSN: ['2199-160X']
DOI: https://doi.org/10.1002/aelm.202100777